| http://www.w3.org/ns/prov#value | - ate electrodes and source/drain regionsWO2011100212A1Feb 8, 2011Aug 18, 2011Cree, Inc.Methods of forming contact structures including alternating metal and silicon layers and related devicesWO2014200753A2Jun 2, 2014Dec 18, 2014Cree, Inc.Recessed field plate transistor structures* Cited by examinerClassifications U.S. Classification438/149, 977/840, 148/DIG.72, 148/DIG.113, 438/172, 977/755, 977/76
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