| http://www.w3.org/ns/prov#value | - Patent US20020197880 - Method for uniform nitridization of ultra-thin silicon dioxide layers in ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More ??Sign inAdvanced Patent SearchPatentsAn embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming
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