| http://www.w3.org/ns/prov#value | - 008Samsung Electronics Co., Ltd.Method of forming metal layer used in the fabrication of semiconductor deviceUS742940210 Dec 200430 Sep 2008Applied Materials, Inc.Depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer; depositing a tungsten nucleation layer on the ruthenium layer and depositing a tu
|
