| http://www.w3.org/ns/prov#value | - and its manufacturing methodUS65010949 juin 199831 d???c. 2002Semiconductor Energy Laboratory Co., Ltd.Semiconductor device comprising a bottom gate type thin film transistorUS650417428 mars 20007 janv. 2003Semiconductor Energy Laboratory Co., Ltd.Thin film transistor; crystal silicon thin film formed on a substrate such as a glass and quartz; containing a metal element which promotes crystallizat
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