| http://www.w3.org/ns/prov#value | - Taking the above circumstances into consideration, the present invention is an object is to provide a method of manufacturing a semiconductor substrate by bonding two silicon wafers, characterized by omitting the oxidation treatment in a H2 SO4 +H2 O2 solution, and reducing the electric resistance at the bonding interface by eliminating the localization of the oxide film at the bonding interface,
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