| http://www.w3.org/ns/prov#value | - Patent US7897446 - Method of forming a high electron mobility transistor hemt, utilizing self ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More ??Sign inAdvanced Patent SearchPatentsA semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer
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