| http://www.w3.org/ns/prov#value | - Vacuum annealing is preferably performed using the same method described previously with reference to FIG. 1C. Through vacuum annealing, impurities, such as carbon, remaining on the HfO2 dielectric layer 334 can be effectively removed, and the HfO2 dielectric layer 334 can be effectively densified. [0089] Referring to FIG. 27E, a Cl barrier layer 336 is formed on the HfO2 dielectric layer 334 ther
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