| http://www.w3.org/ns/prov#value | - Material, such as a polysilicon layer and a nitride layer, is deposited on the gate oxide layer to protect the...http://www.google.fr/patents/US20020031898?utm_source=gb-gplus-shareBrevet US20020031898 - Method of fabricating an isolation structure on a semiconductor substrate Recherche avanc???e dans les brevets Num???ro de publicationUS20020031898 A1Type de publicationDemande Num???ro de demande
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