| http://www.w3.org/ns/prov#value | - a channel region of the fin.A second aspect of the present invention is a method of forming a FinFET device, comprising: (a) providing a semiconductor substrate, (b) forming a dielectric layer on a top surface of the substrate; (c) forming a silicon fin having sidewalls ona top surface of the dielectric layer; and (d) forming a protective spacer on at least a lower portion of at least one of the s
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