| http://www.w3.org/ns/prov#value | - Namely, the fabrication process for a SOI substrate according to the present invention is a fabrication process comprising a step of making a surface layer of a single-crystal Si substrate porous to form a porous single-crystal Si region on a first non-porous single-crystal Si region; a step of forming a second non-porous single-crystal Si region over a surface of said porous single-crystal Si reg
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