| http://www.w3.org/ns/prov#value | - aid p- and n-type thin film transistors are independently set by said step of non-selectively doping and said step of selectively doping. [0031] Another aspect of the semiconductor device fabrication method of the present invention is a method of fabricating a semiconductor device comprising a plurality of CMOS transistors in each of which p- and n-type thin film transistors are formed and which a
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