| http://www.w3.org/ns/prov#value | - FIGS. 3C and 3D are a cross sectional view and a plan view showing the state that a compressive stress film is formed only on the active region in the MOSFET region and stresses are released from the compressive stress film on the element isolation region STI. The compressive stress film CS is formed covering the insulated gate electrode structure constituted of an insulated gate electrode G on a
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