| http://www.w3.org/ns/prov#value | - Patent US7863171 - SOI transistor having a reduced body potential and a method of forming the same - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More ??Sign inAdvanced Patent SearchPatentsBy introducing a atomic species, such as carbon, fluorine and the like, into the drain and source regions, as well as in the body region, the junction leakage of SOI transistors may be signific
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