| http://www.w3.org/ns/prov#value | - able layer formed on the non-single-crystalline semiconductor layer; wherein the non-single-crystalline semiconductor layer has a first layer on the side of the substrate and a second layer on the first layer to create a transition region; wherein the first layer is P or N type and is formed principally of Si, SiC1-x (0<x<1), or SiO2-x (0<x<2) and contains hydrogen, flourine or chlorine, the secon
|
