| http://www.w3.org/ns/prov#value | - Patent US6632747 - Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More ??Sign inAdvanced Patent SearchPatentsAn embodiment of the present invention is a method of forming an ultra-thin dielectric layer by providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the
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