| http://www.w3.org/ns/prov#value | - Based on the foregoing, a need exists for an improved method of making an IGFET and a field dielectric between active regions, particularly where the IGFET is an asymmetrical device with low source-drain resistance, an LDD and an extremely narrow gate, silicide contacts are formed on the gate, source and drain, the field dielectric substantially eliminates encroachment and other problems associate
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