| http://www.w3.org/ns/prov#value | - Patent US5976966 - Converting a hydrogen silsesquioxane film to an oxide using a first heat ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More ??Sign inAdvanced Patent SearchPatentsAn insulating film is formed by CVD on the surface of a semiconductor substrate formed with circuit elements such as transistors, and thereafter a hydrogen silsesquioxane resin film is formed on t
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