| http://www.w3.org/ns/prov#value | - A base insulating film 52 made from a film such as silicon nitride, silicon oxynitride, or silicon oxide is formed with a thickness of 10 to 200 nm (preferable from 10 to 100 nm) on the substrate 51 by a known method (LPCVD, plasma CVD, and the like).
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