| http://www.w3.org/ns/prov#value | - gned gate electrodes and source/drain regionsWO2011100212A1Feb 8, 2011Aug 18, 2011Cree, Inc.Methods of forming contact structures including alternating metal and silicon layers and related devices* Cited by examinerClassifications U.S. Classification257/183.1, 257/E29.091, 257/280, 257/613, 257/E29.253International ClassificationH01L29/205, H01L29/778, H01L29/20Cooperative ClassificationY10S148/07
|
