| http://www.w3.org/ns/prov#value | - Agent: Hynix Semiconductor Inc.20110075492 - Memory device bit line sensing system and method that compensates for bit line resistance variations: Systems, devices and methods are disclosed, such as a system and method of sensing the voltage on bit lines that, when respective memory cells coupled to the bit lines are being read that compensates for variations in the lengths of the bit lines betwee
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