| http://www.w3.org/ns/prov#value | - A gallium-nitride-based semiconductor light emitting device fabrication method of the present invention is a method for producing the device by forming a film of a nitride semiconductor (AlxGa1???x)1???yInyN (0???x???1, 0???y???1) on a substrate with low-temperature buffer layer by means of accordance with the metal-organic chemical vapor deposition (MOCVD) method, which comprises the underlying l
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