| http://www.w3.org/ns/prov#value | - A gate dielectric 140 of FIG. 1, when operating in a transistor, has both a physical gate dielectric thickness and an equivalent oxide thickness (teq) The equivalent oxide thickness quantifies the electrical properties, such as capacitance, of a gate dielectric 140 in terms of a representative physical thickness. teq is defined as the thickness of a theoretical SiO2 layer that would be required to
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