| http://www.w3.org/ns/prov#value | - g step 62, the seventh application step 63 and the eighth application step 64 until it is verified that all of the memory cells have been already programmed at least once, wherein the memory cell is a nonvolatile memory cell including a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both s
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