PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • In contrast with the bipolar transistor, IGBT is a voltage-driven device as shown in FIG. 1(B) and in order to turn it on with an adequately low voltage, it is effective to increase the gate voltage as much as possible within the permissible range.
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