| http://www.w3.org/ns/prov#value | - Thus, the dry-etching apparatus for use in the present invention is not restricted to the said apparatus in a parallel plate type, and Si3 N4 can be selectively etched in various kinds of well known dry-etching apparatus such as the so-called microwave plasma etching apparatus that generates plasma by microwave excitation, or a planar magnetron-type plasma etching apparatus.
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