| http://www.w3.org/ns/prov#value | - The program operation for memory cells in the array 10 of FIG. 1 may be performed by placing a voltage such as +9V on the non-volatile pull-down row line associated with a row including a cell to be programmed and placing a voltage such as 0V on the non-volatile row lines associated with cells where programming is to be inhibited.
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