| http://www.w3.org/ns/prov#value | - A dual silicon oxide layer may be obtained in one embodiment of the invention by depositing a first silicon oxide layer at low level of surface uniformity and deposition rate of greater than about 2,500 ???/min or greater, such as between about 3,000 ???/min and about 15,000 ???/min, for example, a deposition rate of about 11,000 ???/min inside a PECVD chamber available from AKT, a division of App
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