| http://www.w3.org/ns/prov#value | - d diffusion barrier materials and plasma etches may be modified in various ways including the following.(a) Presume a stack of Ir/PZT/Ir of thicknesses 50 nm/150 nm/150 nm on a stem with bottom diffusion barrier already formed baut with no top diffusion barrier/hardmask; any sidewall diffusion barriers will be formed after capacitor etching, and atop diffusion barrier will come with the top metal
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