| http://www.w3.org/ns/prov#value | - ded into at least a channel formation region, so that the element may be added anytime before formation of a gate electrode. [0264] In the case where the element is added at a time other than the film formation, it is possible to use such means as addition by an ion implantation method or a plasma doping method, addition by diffusion from a vapor phase, or addition by diffusion from a solid phase.
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