PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • Then, a region other than a region in which a p-MOS FET is to be formed is covered with photoresist 308, followed by ion-implanting of phosphorus (P) at 1 MeV at a dose of about 3???1013 cm-2 to thereby form n-wells 309.
http://www.w3.org/ns/prov#wasQuotedFrom
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