| http://www.w3.org/ns/prov#value | - A silicon oxide film 39 of thickness of 6000 ??? was then formed as an interlayer insulator by plasma CVD, contact holes were formed in this, and TFT source region and drain region electrodes/leads 40a, 40b were formed using a metallic material, for example a multilayer film of titanium nitride and aluminum.
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