| http://www.w3.org/ns/prov#value | - A silicon oxide film 419 of thickness 6000 ??? was then formed as an interlayer insulator by plasma CVD, contact holes were formed in this, and TFT source region and drain region electrodes/leads 420a, 420b were formed using a metallic material, for example a multilayer film of titanium nitride and aluminum.
|
