| http://www.w3.org/ns/prov#value | - A silicon oxide film 529 of thickness 6000 ??? was then formed as an interlayer insulator by plasma CVD, contact holes were formed in this, and TFT source region and drain region electrodes/leads 530a, 530b were formed using a metallic material, for example a multilayer film of titanium nitride and aluminum.
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