| http://www.w3.org/ns/prov#value | - In a region other than the ridge portion on the p-type GaAlN cladding layer 39, an n-type InGaN light confining layer 40 is selectively formed in a buried manner and, thereafter, a p-type GaN layer 41, and a p-type InGaN contact layer 42 are grown on the cladding layer 39 and the light confining layer 40.
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