About: http://webisa.webdatacommons.org/394360689

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	In either embodiment, the method may be used to form a semiconductor device including an oxide-nitride gate dielectric having an electrical equivalent oxide gate dielectric thickness of less than approximately 20 angstroms.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com