About: http://webisa.webdatacommons.org/395778386

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention relates to memory devices based on phase change based memory material, including chalcogenide based materials and other materials, and methods for operating such devices.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com