| http://www.w3.org/ns/prov#value | - Alternatively, gate dielectric layer 16 may be a layer of chemically vapor deposited silicon dioxide, or another dielectric material such as silicon oxynitride, which may be formed by thermally nitriding a layer of thermal or deposited silicon dioxide in an ambient containing ammonia (NH3), nitrous oxide (N2 O), or nitric oxide (NO).
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