| http://www.w3.org/ns/prov#value | - A memory comprising: a number of access transistors, at least one access transistor including a gate coupled to a dielectric film containing a HfO2/ZrO2 nanolaminate, the dielectric film formed on a body region between a first source/drain region and a second source/drain region; a number of word lines coupled to a number of the gates of the number of access transistors; a number of source lines c
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