| http://www.w3.org/ns/prov#value | - A memory comprising: a number of access transistors, at least one access transistor including a gate coupled to a dielectric layer, the dielectric layer disposed on a body region in a substrate between a source region and a drain region; and a number of bit lines coupled to the number of access transistors; the dielectric layer formed by a method including: pulsing a titanium-containing precursor
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