| http://www.w3.org/ns/prov#value | - A method of fabricating a DRAM device, comprising:forming a transistor including a gate, a source/drain region and a word line on a silicon substrate; covering the transistor with an oxide layer, forming a contact opening in the oxide layer to expose a surface of the source/drain region; forming a conductive layer in the contact opening and covering the oxide layer; patterning the conductive layer
|
