| http://www.w3.org/ns/prov#value | - A memory array comprising: a number of access transistors, each access transistor including a gate coupled to a film containing Pr2O3 and another lanthanide oxide, the film formed on a body region between a first and a second source/drain regions; a number of word lines coupled to a number of the gates of the number of access transistors; a number of source lines coupled to a number of the first s
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