| http://www.w3.org/ns/prov#value | - A method of manufacturing a memory device, the method comprising: providing a substrate having a first electrode thereon; providing a vapor comprising one or more precursor compounds of the formula Ta(OR1)x(O???R2???OR3)y (Formula I), wherein each R is an organic group, x=3-4, and y=1-2; directing the one or more vaporized precursor compounds to the substrate to form a tantalum oxide dielectric la
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