| http://www.w3.org/ns/prov#value | - A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20;21???) comprising a silicate material and forming, by atomic layer deposition (ALD) one or more layers of a high dielectric constant oxide (42) on the seed lay
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