| http://www.w3.org/ns/prov#value | - A memory device comprising:a plurality of memory cells, wherein each memory cell includes a transistor comprising:a source region; a drain region; a channel region between the source and drain regions; a floating gate separated from the channel region by an insulator, the floating gate formed of a silicon oxycarbide compound SiO.sub.(2-2w) Cw, wherein w is a value approximately between 0 and 1.0 t
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