| http://www.w3.org/ns/prov#value | - A method of producing a semiconductor device including a step for simultaneously dry etching a deposited silicon oxide layer comprising the steps of:providing an etching gas mixture comprising a carbon fluoride gas, Cn F2n+2, wherein n is an integer, and an inert gas; creating a plasma wherein fluorine radicals, F*, are liberated in the plasma; providing an absorption layer comprising inert gas mo
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