| http://www.w3.org/ns/prov#value | - Impurities such as phosphorous and boron are embedded in the polycrystal silicon film 52 in a self-aligning manner with the gate electrode 55, activated thereafter, and a CMOS structure source area and drain area 56 are formed thereby. [0146] As shown in FIG. 12C, an interlayer insulation film 57 is deposited, a contact hole is opened, and the source electrode and drain electrode 58 are deposited
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