| http://www.w3.org/ns/prov#value | - A method of forming a semiconductor circuit construction, comprising forming a material which comprises QxRySz; wherein Q is a single element selected from the group consisting of tantalum and tungsten, R is a single element selected from the group consisting of tungsten, aluminum and silicon, S is a single element selected from the group consisting of nitrogen and oxygen, and B is boron; provided
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