| http://www.w3.org/ns/prov#value | - FIG. 1A is a cross-sectional view schematically showing the structure of a stack-type semiconductor device according to a first embodiment of the present invention, and FIG. 1B is a plan view of the structure of the stack-type semiconductor device as shown in FIG. 1A, as viewed from the backside of the semiconductor device under the state without a sealing resin.
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