| http://www.w3.org/ns/prov#value | - FIG. 3A indicates, as was previously described in connection with FIGS. 2 an annealing treatment, which is conducted in an inert gas atmosphere, such as argon, nitrogen or the like, at a prescribed temperature, T1, to perform solid phase recrystallization on noncrystalline silicon film 102 to form polycrystalline silicon film 103.
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