| http://www.w3.org/ns/prov#value | - mbodiment mode, a single layer structure or a stacked-layer structure including silicon oxide, silicon oxynitride (SiOxNy, where x>y>0), and/or silicon nitride oxide (SiNxOy, where x>y>0) formed by a CVD method is provided as the insulating layer 203.
|
